Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature-Reference-Cited by-同舟云学术

Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature

Published:2020-05-01 Issue:5 Volume:10 Page:055025
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ibukuro Kouta¹^ORCID,Hillier Joseph William¹^ORCID,Liu Fayong¹^ORCID,Husain Muhammad Khaled¹,Li Zuo¹,Tomita Isao¹²,Tsuchiya Yoshishige¹,Rutt Harvey Nicholas¹^ORCID,Saito Shinichi¹^ORCID

Affiliation:

1. School of Electronics and Computer Science, University of Southampton, University Road, Southampton SO17 1BJ, United Kingdom

2. Department of Electrical and Computer Engineering, National Institute of Technology, Gifu college. 2236-2 Kamimakuwa, Motosu, Gifu 501-0495, Japan

Funder

Lloyds register foundation

Joint Research Project

Participating States and from the European Union’s Horizon 2020 research and innovation programme

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009585

Reference58 articles.

1. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

2. A single-atom transistor

3. Single-electron tunneling through an individual arsenic dopant in silicon

4. Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

5. Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

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