Tuning of the single-particle relaxation time of a high mobility electron gas in a Ga0.25In0.75As/InP quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118378
Reference11 articles.
1. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
2. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
3. Optimization of modulation‐doped Ga1−xInxAs/InP heterostructures towards extremely high mobilities
4. Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two‐dimensional electron gas mobilities
5. Single-particle relaxation time of one-dimensional electron gases
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1. Exploration the quantum and transport lifetimes of electron gas in partially alloyed AlGaAs quantum well;Superlattices and Microstructures;2015-07
2. Alloy-disorder scattering of the interacting electron gas in quantum wells and heterostructures of Al x Ga1 − x As;JETP Letters;2013-12
3. Electron and hole scattering in short-period InGaAs/InP superlattices;Journal of Applied Physics;2011-10
4. Ballistic transport in InSb∕InAlSb antidot lattices;Applied Physics Letters;2004-06-28
5. Effects of charged self-assembled quantum dots on two-dimensional quantum transport;Applied Physics Letters;2000-03-27
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