Current‐voltage and capacitance‐voltage characteristics of a metal/Al0.5Ga0.5As/GaAs capacitor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94714
Reference14 articles.
1. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
2. Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation
3. Enhancement-Mode High Electron Mobility Transistors for Logic Applications
4. Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures
5. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photosensitive capacitance‐voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures;Applied Physics Letters;1986-03-10
2. Influence of a surface electric field on the line shape of the excitonic emission in GaAs;Physical Review B;1985-11-15
3. Capacitance‐voltage characteristics of GaAs‐AlAs heterostructures;Applied Physics Letters;1985-09-15
4. Summary Abstract: Passivation of the GaAs surface by an amorphous phosphorus overlayer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1985-07
5. Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics;IEEE Transactions on Electron Devices;1985-06
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