Hot‐electron‐induced hydrogen redistribution and defect generation in metal‐oxide‐semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357420
Reference50 articles.
1. Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors
2. Trap generation and electron detrapping in SiO2during high‐field stressing of metal‐oxide‐semiconductor structures
3. Comparison of high‐field stress effects in metal‐oxide‐semiconductor structures with aluminum and polycrystalline silicon gates using internal photoemission measurements
4. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures
5. Trap generation and occupation dynamics in SiO2under charge injection stress
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