Optical properties of AlGaN nanowires synthesized via ion beam techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4984015
Reference26 articles.
1. III-Nitride nanowire optoelectronics
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3. Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer
4. Ultraviolet light-emitting diodes based on group three nitrides
5. Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
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