Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence-Reference-Cited by-同舟云学术

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Published:2002-04-15 Issue:8 Volume:91 Page:5072-5078
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maaßdorf A.,Gramlich S.,Richter E.,Brunner F.,Weyers M.,Tränkle G.,Tomm J. W.,Mazur Y. I.,Nickel D.,Malyarchuk V.,Günther T.,Lienau Ch.,Bärwolff A.,Elsaesser T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1456244

Reference18 articles.

1. Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

2. Minority electron lifetimes in heavily dopedp‐type GaAs grown by molecular beam epitaxy

3. Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

4. Minority-Carrier Lifetime in Heavily Doped GaAs:C

5. Auger recombination in intrinsic GaAs

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