High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO2 nanoparticle dielectric layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2361278
Reference22 articles.
1. Properties and applications of high-mobility semiconducting nanotubes
2. E. S. Yang, Microelectronic Devices (McGraw-Hill, New York, 1988), Chap. 2, 35.
3. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
4. High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction
5. High-mobility thin-film transistors based on aligned carbon nanotubes
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