Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs-Reference-Cited by-同舟云学术

Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Published:1993-04 Issue:7 Volume:73 Page:3291-3294
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee Kun‐jing,Lee Joseph Ya‐min,Chang Yu‐jeng

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352976

Reference11 articles.

1. Migration-enhanced epitaxy of GaAs and AlGaAs

2. Increase of electrical activation and mobility of Si‐doped GaAs, grown at low substrate temperatures, by the migration‐enhanced epitaxy method

3. Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates

4. Improvement of GaAs/AlGaAs molecular beam epitaxial growth by a flux‐interruption‐and‐annealing method using phase‐locked reflection high‐energy electron diffraction oscillation

5. Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high-energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular-beam epitaxial growth and surface characterization of GaAs(311)B;Applied Physics Letters;2001-02-05

2. IN SITU OBSERVATION DURING MOLECULAR BEAM EPITAXY: IMPURITY INCORPORATION AND DISSIMILAR MATERIALS EPITAXIAL GROWTH ON GaAs(001);Handbook of Surfaces and Interfaces of Materials;2001

3. Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy;Semiconductor Science and Technology;1994-02-01

4. Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE;MRS Proceedings;1993