Investigation of the inversion layer electron mobility in α-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118292
Reference17 articles.
1. 6H-silicon carbide devices and applications
2. The guard-ring termination for the high-voltage SiC Schottky barrier diodes
3. Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide Structure
4. A high-current and high-temperature 6H-SiC thyristor
5. Progress in silicon carbide semiconductor electronics technology
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1. The intrinsic atomic-level surface roughness mobility limit of 4H-SiC;Journal of Applied Physics;2018-09-14
2. Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors;Silicon Carbide;2011-03-28
3. Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors;physica status solidi (a);2009-06-25
4. FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD;Materials Science Forum;2007-09
5. Improvement in breakdown voltage characteristics of SiC Schottky barrier diode by incorporating a guard ring-assisted field limiting ring and an internal ring;physica status solidi (a);2006-12
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