Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co2FeGa0.5Ge0.5/Ag/Co2FeGa0.5Ge0.5 current-perpendicular-to-plane pseudo spin valves
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047, Japan
2. Kyoto Institute of Technology, Electrical Engineering and Electronics, Kyoto 606-8585, Japan
Funder
Advanced Storage Technology Consortium (ASTC)
ImPACT project Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943640
Reference18 articles.
1. Magnetization Reversal Process of Tri-Layer Readers for Ultrahigh Density Data Storage
2. Magnetoresistance Ratio and Resistance Area Design of CPP-MR Film for 2–5 $\hbox{Tb/in}^{2}$ Read Sensors
3. CPP-GMR technology for magnetic read heads of future high-density recording systems
4. Theory of the perpendicular magnetoresistance in magnetic multilayers
5. Effect of the number of layers on determination of spin asymmetries in current-perpendicular-to-plane giant magnetoresistance
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