Observation of stripe‐direction dependence of threshold current density for AlGaInP laser diodes with CuPt‐type natural superlattice in Ga0.5In0.5P active layer-Reference-Cited by-同舟云学术

Observation of stripe‐direction dependence of threshold current density for AlGaInP laser diodes with CuPt‐type natural superlattice in Ga0.5In0.5P active layer

Published:1992-08-17 Issue:7 Volume:61 Page:737-739
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fujii H.,Ueno Y.,Gomyo A.,Endo K.,Suzuki T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.107782

Reference8 articles.

1. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

2. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

3. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors

4. AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

5. Electronic structure of the (GaP)1/(InP)1(111) strained-layer superlattice

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