Electrical activation kinetics for shallow boron implants in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123929
Reference9 articles.
1. Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time
2. Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon
3. Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing
4. Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing
5. Problems with The Concept of Thermal Budget: Experimental Demonstrations
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2. Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold;Japanese Journal of Applied Physics;2020-08-13
3. Low-temperature activation of boron ion in silicon substrate using B10H14 + cluster and by soft X-ray irradiation;Japanese Journal of Applied Physics;2018-10-12
4. Defect evolution and dopant activation in laser annealed Si and Ge;Materials Science in Semiconductor Processing;2016-02
5. Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation;IEICE Transactions on Electronics;2016
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