Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric-Reference-Cited by-同舟云学术

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Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric

Published:2006-02-13 Issue:7 Volume:88 Page:073516
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chung Choong-Heui,Kim Yong-Hae,Moon Jaehyun,Lee Myung-Hee,Lim Jung Wook,Yun Sun Jin,Park Dong-Jin,Kim Dae-Won,Lee Jin Ho

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2178407

Reference17 articles.

1. Mechanism of a hydrogenating polycrystalline silicon in hydrogen plasma annealing

2. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

3. High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation

4. Enhanced H2-plasma effects on polysilicon thin-film transistors with thin ONO gate-dielectrics

5. Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Transistors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns;IEEE Transactions on Electron Devices;2012-12

2. Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment;Solid-State Electronics;2010-03

3. Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application;Electrochemical and Solid-State Letters;2010

4. Preparation of dense, smooth and homogeneous amorphous silicon nitride films by nitrogen-ion-beam assisted evaporation;Journal of Physics D: Applied Physics;2008-08-21

5. Electrical properties of Bi2Mg2∕3Nb4∕3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications;Applied Physics Letters;2007-01-29

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