Direct growth of graphene on Si(111)-Reference-Cited by-同舟云学术

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Direct growth of graphene on Si(111)

Published:2014-06-14 Issue:22 Volume:115 Page:223704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thanh Trung Pham,Campos-Delgado Jessica,Joucken Frédéric,Colomer Jean-François,Hackens Benoît,Raskin Jean-Pierre,Santos Cristiane N.,Robert Sporken

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4882181

Reference17 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films

4. Growth and properties of few-layer graphene prepared by chemical vapor deposition

5. Substrate considerations for graphene synthesis on thin copper films

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001);ACS Applied Materials & Interfaces;2023-07-21

2. Effect of Germanium Surface Orientation on Graphene Chemical Vapor Deposition and Graphene-Induced Germanium Nanofaceting;Chemistry of Materials;2022-07-18

3. Suspended graphene on germanium: selective local etching via laser-induced photocorrosion of germanium;2D Materials;2021-06-02

4. High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates;ACS Applied Materials & Interfaces;2020-08-31

5. Epitaxial graphene/Ge interfaces: a minireview;Nanoscale;2020

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