Impurity reduction in In0.53Ga0.47As layers grown by liquid phase epitaxy using Er-treated melts
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126104
Reference16 articles.
1. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
2. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
3. Temperature dependence of intra‐4f‐shell photo‐ and electroluminescence spectra for erbium‐doped GaAs
4. Incorporation of erbium in GaAs by liquid‐phase epitaxy
5. Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics
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1. Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs;Applied Physics Letters;2012-12-03
2. Structural and electronic properties of an abrupt4H−SiC(0001)∕SiO2interface model: Classical molecular dynamics simulations and density functional calculations;Physical Review B;2007-08-31
3. Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy;Thin Solid Films;2007-03
4. Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy;Semiconductor Science and Technology;2005-11-07
5. Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization;Bulletin of Materials Science;2005-07
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