Capacitance–voltage measurements on plasma enhanced chemical vapor deposited silicon nitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373073
Reference21 articles.
1. The characteristics and properties of optimised amorphous silicon field effect transistors
2. Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation
3. Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride
4. Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors
5. High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding
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