Effect of reactant dosing on selectivity during area-selective deposition of TiO2 via integrated atomic layer deposition and atomic layer etching
Author:
Affiliation:
1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
2. Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Funder
National Science Foundation
Semiconductor Research Corporation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0013552
Reference62 articles.
1. Self-aligned nanoscale processing solutions via selective atomic layer deposition of oxide, nitride, and metallic films
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3. The use of atomic layer deposition in advanced nanopatterning
4. Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
5. Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal–Dielectric Patterns
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