Thermal oxidation of InP in phosphorus pentoxide vapor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329297
Reference6 articles.
1. An InP MIS diode
2. Analysis of the oxide/semiconductor interface using Auger and ESCA as applied to InP and GaAs
3. Thermal oxidation of InP and properties of oxide film
4. An improved anodic oxide insulator for InP metal‐insulated‐semiconductor field‐effect transistors
5. Luminescent Centers in Lead- and Tin-Activated Zinc Sulphide
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2. Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition;Journal of Electronic Materials;2002-12
3. Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density;Journal of Applied Physics;1999-05
4. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy;Solid-State Electronics;1998-04
5. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure;Journal of Applied Physics;1997-11-15
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