Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation-Reference-Cited by-同舟云学术

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Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

Published:2005-12-05 Issue:23 Volume:87 Page:231109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rouvière M.,Vivien L.,Le Roux X.,Mangeney J.,Crozat P.,Hoarau C.,Cassan E.,Pascal D.,Laval S.,Fédéli J.-M.,Damlencourt J.-F.,Hartmann J. M.,Kolev S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2139837

Reference12 articles.

1. The optical age of silicon

2. Experimental demonstration of a low-loss optical H-tree distributionusing silicon-on-insulator microwaveguides

3. Strain-induced band gap shrinkage in Ge grown on Si substrate

4. Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

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