Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions

Published:2018-04-09 Issue:15 Volume:112 Page:152401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang De-Lin¹,Schliep Karl B.²,Wu Ryan J.²,Quarterman P.¹,Reifsnyder Hickey Danielle²,Lv Yang¹^ORCID,Chao Xiaohui¹,Li Hongshi²,Chen Jun-Yang¹^ORCID,Zhao Zhengyang¹^ORCID,Jamali Mahdi¹,Mkhoyan K. Andre²,Wang Jian-Ping¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA

2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5019193

Reference38 articles.

1. Spin transfer in nanomagnetic devices with perpendicular anisotropy

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Electric-field-assisted switching in magnetic tunnel junctions

4. A new spin on magnetic memories

5. Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

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