Concurrent wafer-level measurement of longitudinal and transverse effective piezoelectric coefficients (d33,f and e31,f) by double beam laser interferometry-Reference-Cited by-同舟云学术

Concurrent wafer-level measurement of longitudinal and transverse effective piezoelectric coefficients (d33,f and e31,f) by double beam laser interferometry

Published:2018-01-07 Issue:1 Volume:123 Page:014103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sivaramakrishnan S.¹,Mardilovich P.¹,Schmitz-Kempen T.²^ORCID,Tiedke S.²

Affiliation:

1. Xaar plc, 316 Science Park, Cambridge CB4 0XR, United Kingdom

2. aixACCT Systems GmbH, Talbotstr. 25, Aachen, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5019568

Reference19 articles.

1. Interferometric measurements of electric field‐induced displacements in piezoelectric thin films

2. Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O3 thin films

3. Short-time piezoelectric measurements in ferroelectric thin films using a double-beam laser interferometer

4. Piezoelectric thin films: evaluation of electrical and electromechanical characteristics for MEMS devices

5. Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

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