High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102174
Reference8 articles.
1. Extreme nonequilibrium electron transport in heterojunction bipolar transistors
2. Extreme nonequilibrium electron transport in heterojunction bipolar transistors
3. Subpicosecond InP/InGaAs heterostructure bipolar transistors
4. The dielectric constant and plasma frequency of p-type Ge like semiconductors
5. Nonequilibrium electron transport in bipolar devices
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3. Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1994
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