Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates-Reference-Cited by-同舟云学术

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Published:2019-06-03 Issue:22 Volume:114 Page:222901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lyu J.¹,Fina I.¹^ORCID,Bachelet R.²^ORCID,Saint-Girons G.²,Estandía S.¹,Gázquez J.¹,Fontcuberta J.¹^ORCID,Sánchez F.¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain

2. Institut des Nanotechnologies de Lyon (INL-CNRS UMR 5270), Université de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex, France

Funder

Spanish Ministery of Economy, Competitiveness and Universities

Spanish Ministery of Economy, Competittiveness and Universities

European Commission

Generalitat de Catalunya

China Scholarship Council

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5096002

Reference33 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

3. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

4. Stabilizing the ferroelectric phase in doped hafnium oxide

5. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

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