Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons-Reference-Cited by-同舟云学术

Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

Published:2020-10-19 Issue:16 Volume:117 Page:162101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pashnev Daniil¹^ORCID,Korotyeyev Vadym V.¹^ORCID,Jorudas Justinas¹^ORCID,Kaplas Tommi¹^ORCID,Janonis Vytautas¹^ORCID,Urbanowicz Andrzej¹^ORCID,Kašalynas Irmantas¹^ORCID

Affiliation:

1. Center for Physical Sciences and Technology, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania

Funder

Lietuvos Mokslo Taryba

European Regional Development Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0022600

Reference22 articles.

1. GaN power switches on the rise: Demonstrated benefits and unrealized potentials

2. Low frequency noise and trap density in GaN/AlGaN field effect transistors

3. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

4. Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

5. 0.25- GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors

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