III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors-Reference-Cited by-同舟云学术

III-V semicondutor nanostructures and iontronics: InAs nanowire-based electric double layer field effect transistors

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
language:
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Author:

Prete Domenic,Lieb Johanna,Demontis Valeria,Bellucci Luca,Tozzini Valentina,Ercolani Daniele,Zannier Valentina,Sorba Lucia,Ono Shimpei,Beltram Fabio,Sacépé Benjamin,Rossella Francesco

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123564

Reference53 articles.

1. Endeavor of Iontronics: From Fundamentals to Applications of Ion‐Controlled Electronics

2. Electric-double-layer field-effect transistors with ionic liquids

3. Optoelectronic response of a WS 2 tubular p - n junction

4. Mono- and Bilayer WS2 Light-Emitting Transistors

5. Large Conductance Modulation of Gold Thin Films by Huge Charge Injection via Electrochemical Gating

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