Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2grown on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102304
Reference9 articles.
1. Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates
2. Polycrystalline thin-film CuInSe2/CdZnS solar cells
3. Growth of compound semiconductor photovoltaic materials
4. Organometallic vapor‐phase‐epitaxial growth and characterization of ZnGeAs2on GaAs
5. Organometallic Vapor Phase Epitaxial Growth of ZnGeAs2 and (ZnGeAs2)xGe1−x on GaAs
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1. Structural and electronic properties of ZnSnAs2: A first-principles study by MGGA method;Pramana;2022-09-06
2. First-principles prediction on elastic anisotropic, optical, lattice dynamical properties of ZnGeP2;Indian Journal of Physics;2019-08-31
3. Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography;Nature Communications;2014-11-14
4. Electronic, optical and bonding properties of MgYZ2 (Y=Si, Ge; Z=N, P) chalcopyrites from first principles;Materials Science in Semiconductor Processing;2014-10
5. Towards from indirect to direct band gap and optical properties of XYP2 (X=Zn, Cd; Y=Si, Ge, Sn);Physica B: Condensed Matter;2014-05
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