The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
Author:
Affiliation:
1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2. Cuiying Honors College, Lanzhou University, Lanzhou 730000, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4976512
Reference26 articles.
1. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
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3. Resistive Switching in Single Epitaxial ZnO Nanoislands
4. Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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