Suppression of phosphorus diffusion by carbon co-implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234315
Reference10 articles.
1. Mechanisms of B deactivation control by F co-implantation
2. Annealing behavior of low-energy ion-implanted phosphorus in silicon
3. Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
4. Metastable boron active concentrations in Si using flash assisted solid phase epitaxy
5. Low Resistance, Low-Leakage Ultrashallow p<tex>$^+$</tex>-Junction Formation Using Millisecond Flash Anneals
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