Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1734682
Reference15 articles.
1. Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
2. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
3. Single-quantum well InGaN green light emitting diode degradation under high electrical stress
4. Hole Compensation Mechanism of P-Type GaN Films
5. Characterization of GaN-based metal–semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies
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