Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures-Reference-Cited by-同舟云学术

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Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Published:2002-10-15 Issue:8 Volume:92 Page:4726-4730
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rumyantsev S. L.,Deng Y.,Borovitskaya E.,Dmitriev A.,Knap W.,Pala N.,Shur M. S.,Levinshtein M. E.,Khan M. Asif,Simin G.,Yang J.,Hu X.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1508432

Reference20 articles.

1. Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET

2. Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices

3. Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

4. Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

5. Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET, and MOSFET devices

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs;IEEE Transactions on Device and Materials Reliability;2020-06

2. Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System;Semiconductors;2018-06-07

3. Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-Substrate via Technique and Backside Heat Sink Metal on Silicon-on-Insulator Substrates;ECS Journal of Solid State Science and Technology;2018

4. Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties;IEEE Electron Device Letters;2017-08

5. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs;IEEE Transactions on Device and Materials Reliability;2016-09

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