Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
ARPA-E
DOE EERE
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0008758
Reference48 articles.
1. Power GaN Devices
2. Excellent crystallinity of truly bulk ammonothermal GaN
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4. Bulk GaN crystals grown by HVPE
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