Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448880
Reference31 articles.
1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
2. Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutions
3. Atomic Force Microscopy Observations of Si Surfaces after Rinsing in Ultrapure Water with Low Dissolved Oxygen Concentration
4. Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption
5. Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments
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2. Self-Propagating Reaction Produces Near-Ideal Functionalization of Si(100) and Flat Surfaces;The Journal of Physical Chemistry C;2012-08-23
3. Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations;Journal of Physics: Condensed Matter;2011-09-15
4. Surface Phenomena: Rinsing and Drying;Handbook of Cleaning in Semiconductor Manufacturing;2011-02-22
5. Bonding Structure of Phenylacetylene on Hydrogen-Terminated Si(111) and Si(100): Surface Photoelectron Spectroscopy Analysis and Ab Initio Calculations;Langmuir;2010-09-30
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