Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1477275
Reference17 articles.
1. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
2. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
3. Schottky barrier engineering in III–V nitrides via the piezoelectric effect
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
5. Accurate calculation of polarization-related quantities in semiconductors
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