Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
Author:
Affiliation:
1. Kyoto University, Kyoto 615-8510, Japan
2. Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1118, Japan
3. Nagoya University, Nagoya 464-8603, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5031215
Reference27 articles.
1. Über einen Defekt des transduzierenden Salmonella-Phagen P 22
2. Photocurrent spectroscopy as a tool for determining piezoelectric fields inInxGa1−xN/GaNmultiple quantum well light emitting diodes
3. Franz−Keldysh Effect in GaN Nanowires
4. Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge
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