Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4758383
Reference26 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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5. Transparent, Low Resistance, and Flexible Amorphous ZnO-Doped In[sub 2]O[sub 3] Anode Grown on a PES Substrate
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