Valence band offset of MgO∕InN heterojunction measured by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839611
Reference19 articles.
1. Effective mass of InN epilayers
2. Indium nitride (InN): A review on growth, characterization, and properties
3. Band parameters for nitrogen-containing semiconductors
4. Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy
5. Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
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