Liquid‐phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350419
Reference33 articles.
1. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
2. Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment
3. Low temperature phase diagram of the Ga1−xInxAsySb1−y system
4. High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
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5. Growth and characterization of Ga<formula><inf><roman>x</roman></inf></formula>In<formula><inf><roman>1-x</roman></inf></formula>As<formula><inf><roman>1-y</roman></inf></formula>Sb<formula><inf><roman>y</roman></inf></formula> epitaxial layers grown by LP-MOCVD;SPIE Proceedings;2006-01-26
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