Band gap engineering of MoS2 upon compression-Reference-Cited by-同舟云学术

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Band gap engineering of MoS2 upon compression

Published:2016-04-28 Issue:16 Volume:119 Page:165105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

López-Suárez Miquel¹,Neri Igor¹²,Rurali Riccardo³^ORCID

Affiliation:

1. NiPS Laboratory, Dipartimento di Fisica e Geologia, Università degli Studi di Perugia, 06123 Perugia, Italy

2. INFN Sezione di Perugia, via Pascoli, 06123 Perugia, Italy

3. Institut de Ciència de Materials de Barcelona (ICMAB–CSIC) Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain

Funder

Generalitat de Catalunya (Government of Catalonia)

Seventh Framework Programme (FP7)

Ministerio de Economía y Competitividad (MINECO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948376

Reference16 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets

3. Large-Area Atomically Thin MoS2 Nanosheets Prepared Using Electrochemical Exfoliation

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Stretching and Breaking of Ultrathin MoS2

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4. Electric field-induced changes in photoluminescence and Raman spectra of MoS2 on PVA-coated conductive substrate with nematic liquid crystals: a combined numerical and experimental study;Journal of Materials Science: Materials in Electronics;2024-05

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