Observation of molecular nitrogen in N-doped Ge2Sb2Te5-Reference-Cited by-同舟云学术

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Observation of molecular nitrogen in N-doped Ge2Sb2Te5

Published:2006-12-11 Issue:24 Volume:89 Page:243520
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Kihong,Park Ju-Chul,Chung Jae-Gwan,Song Se Ahn,Jung Min-Cherl,Lee Young Mi,Shin Hyun-Joon,Kuh Bongjin,Ha Yongho,Noh Jin-Seo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2408660

Reference15 articles.

1. Towards a universal memory?

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

4. Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films

5. A Study on the Crystallization Behavior of Nitrogen Doped Ge2Sb2Te5Thin Film

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multilevel optoelectronic hybrid memory based on N-doped Ge₂Sb₂Te₅ film with low resistance drift and ultrafast speed;Chinese Physics B;2023-09-01

2. Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5;Nanomaterials;2021-06-30

3. The “gene” of reversible phase transformation of phase change materials: Octahedral motif;Nano Research;2021-06-28

4. Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials;Journal of Applied Physics;2020-08-21

5. Crystallization accompanied by local distortion behavior of Sn-doped amorphous Ge2Sb2Te5 induced by a picosecond pulsed laser;Journal of Non-Crystalline Solids;2019-07

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