A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2430785
Reference12 articles.
1. Self-assembly of Al[sub 2]O[sub 3] nanodots on SiO[sub 2] using two-step controlled annealing technique for long retention nonvolatile memories
2. Metal nanocrystal memories. I. Device design and fabrication
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