THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures-Reference-Cited by-同舟云学术

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Published:2021-03-08 Issue:10 Volume:118 Page:101101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stark David¹^ORCID,Mirza Muhammad²^ORCID,Persichetti Luca³^ORCID,Montanari Michele³^ORCID,Markmann Sergej¹^ORCID,Beck Mattias¹^ORCID,Grange Thomas⁴^ORCID,Birner Stefan⁴^ORCID,Virgilio Michele⁵^ORCID,Ciano Chiara³,Ortolani Michele⁶^ORCID,Corley Cedric⁷,Capellini Giovanni³⁷^ORCID,Di Gaspare Luciana³^ORCID,De Seta Monica³^ORCID,Paul Douglas J.²^ORCID,Faist Jérôme¹^ORCID,Scalari Giacomo¹^ORCID

Affiliation:

1. Institute for Quantum Electronics, Department of Physics, ETH Zürich, 8093 Zürich, Switzerland

2. James Watt School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom

3. Dipartimento di Scienze, Universita Roma Tre, Roma 00146, Italy

4. nextnano GmbH, Konrad-Zuse-Platz 8, München 81829, Germany

5. Dipartimento di Fisica “E. Fermi,” Universita di Pisa, Pisa 56127, Italy

6. Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, I-00185 Rome, Italy

7. IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236 Frankfurt (Oder) Germany

Funder

H2020 Future and Emerging Technologies

H2020 European Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0041327

Reference43 articles.

1. Recent progress in lasers on silicon

2. Demonstration of a silicon Raman laser

3. Lasing in strained germanium microbridges

4. Tunable quantum dot lasers grown directly on silicon

5. Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers

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