Reactive deposition epitaxial growth of β‐FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction-Reference-Cited by-同舟云学术

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Reactive deposition epitaxial growth of β‐FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction

Published:1995-06-19 Issue:25 Volume:66 Page:3453-3455
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Lianwei,Lin Chenglu,Shen Qinwo,Lin Xian,Ni Rushan,Zou Shichang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113385

Reference8 articles.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix;Crystallography Reports;2021-07

2. New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures;Technical Physics;2011-05

3. Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties;Journal of Nanoscience and Nanotechnology;2008-02-01

4. Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates;Semiconductors;2007-09

5. Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island formation, silicon growth, morphology and structure;Thin Solid Films;2007-07

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