Light‐ion‐bombarded p‐type In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341191
Reference21 articles.
1. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
2. Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasers
3. Optimum proton energy for DH lasers determined by in situ monitoring during bombardment
4. Characterization of Device Isolation in GaAs MESFET Circuits by Boron Implantation
5. Isolation of junction devices in GaAs using proton bombardment
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1. Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector;Journal of Applied Physics;2008-10-15
2. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-07
3. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
4. Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures;Applied Physics Letters;2002-05-20
5. Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr;Journal of Applied Physics;2000-02
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