Contact‐related deep states in the Al‐GaInP/GaAs interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356456
Reference21 articles.
1. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
2. A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
3. Npn and pnp GaInP/GaAs heterojunction bipolar transistors grown by MOCVD
4. Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low‐pressure organometallic chemical vapor deposition
5. Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures
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1. Surface potential in n- and p-GaInP2(100): temperature effect;Journal of Physics D: Applied Physics;2021-02-18
2. Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells;Applied Physics Letters;2002-07
3. Oxygen-related deep level defects in solid-source MBE grown GaInP;Journal of Crystal Growth;2001-07
4. Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2001-04-30
5. Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy;Journal of Applied Physics;1999-10
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