Effects of helicon-wave excited N2 plasma treatment on Fermi-level pinning in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369665
Reference14 articles.
1. New and unified model for Schottky barrier and III–V insulator interface states formation
2. Unified defect model and beyond
3. Calculation of Schottky barrier heights from semiconductor band structures
4. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces
5. Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces
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