Study of non-equilibrium thermal transport in Ge2Sb2Te5 thin films under ultrafast laser excitation using a photo-excited carrier integrated semiconductor model-Reference-Cited by-同舟云学术

Study of non-equilibrium thermal transport in Ge2Sb2Te5 thin films under ultrafast laser excitation using a photo-excited carrier integrated semiconductor model

Published:2017-07-28 Issue:4 Volume:122 Page:043104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Y. H.¹,Liu F. R.¹,Li W. Q.¹,Fan T.¹,Yang J. F.¹,Wang Z. M.¹,Liu F.²,Sun N. X.³

Affiliation:

1. Institute of Laser Engineering, Beijing University of Technology, 100124 Beijing, China

2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xian, China

3. Electrical and Computer Engineering Department, Northeastern University, Massachusetts 02115, USA

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993451

Reference42 articles.

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4. Precise Structuring Using Femtosecond Lasers.

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