Secondary ion mass spectroscopy study of Al diffusion in sandwich-ZnSTe structures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371084
Reference5 articles.
1. Aluminum‐doped n‐type ZnSTe alloy grown by molecular beam epitaxy
2. High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
3. Hrxrd Study of the Strain Properties of MBE-Grown ZnSe and ZnSTe on GaAs
4. Ion implanted standards for secondary ion mass spectrometric determination of the Group IA-VIIA elements in semiconducting matrixes
5. Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layers
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3. Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry;Semiconductor Science and Technology;2009-08-12
4. Electrochemical synthesis, characterization and photophysics of a poly(fluorenylene vinylene) derivative;Synthetic Metals;2006-02
5. Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures;Journal of Crystal Growth;2005-05
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