Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films-Reference-Cited by-同舟云学术

Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films

Published:2020-05-04 Issue:18 Volume:116 Page:182103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stoever Julian¹^ORCID,Boschker Jos E.¹^ORCID,Bin Anooz Saud¹^ORCID,Schmidbauer Martin¹^ORCID,Petrik Peter²^ORCID,Schwarzkopf Jutta¹^ORCID,Albrecht Martin¹^ORCID,Irmscher Klaus¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

2. Institute for Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Str. 29-33, 1121 Budapest, Hungary

Funder

Leibniz Gemeinschaft

European Regional Development Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005523

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5. Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

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