Ohmic contacts ton‐GaAs with a Pt/Ge/Au contacting layer and a Ta‐Si‐N barrier: Electrical and metallurgical characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356651
Reference38 articles.
1. Compound semiconductor contact metallurgy
2. Development of ohmic contact materials for GaAs integrated circuits
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4. Recent developments in ohmic contacts for III–V compound semiconductors
5. Metal-semiconductor contacts for GaAs bulk effect devices
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1. Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement;ACS Applied Materials & Interfaces;2018-07-13
2. Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs;Solid-State Electronics;2011-07
3. Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980nm CW semiconductor lasers;Vacuum;2008-06
4. Influence of Ta/Si atomic ratio on the interdiffusion between Ta–Si–N and Cu at elevated temperature;Journal of Applied Physics;2003
5. Thermal reaction of Pt film with 〈110〉 GaN epilayer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-09
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