Ferroelectric polymer gate on AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817646
Reference13 articles.
1. Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN∕GaN heterostructures
2. Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
3. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
4. Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor
5. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
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